The types and nature of structural defects of n-type silicon with clusters of impurity atoms of copper and iridium were determined by the method of non-stationary capacitive spectroscopy (DLTS), measurements of the resistivity, concentration and lifetime of charge carriers, as well as using infrared and atomic force microscopes Solver-NEXT. It was found that after high-temperature diffusion, star-shaped defects are observed in rapidly cooled Si samples, while in rapidly cooled Si samples they are subsequently embedded in a chain and in the form of a needle, and in both slowly cooled samples, only round-shaped inclusions are formed,however, the density is low. The absence of dislocation decoration in slowly cooled Si and Si samples is associated with the formation of point defects of the [Cu – O] type, [Cu – Si] silicides, and pairs of Cui [Cus – Cui] and Iri [Irs – Iri] atoms. An increase in the lifetime of charge carriers caused by the formation of an adhesion level associated with the [Cu – O] complex in silicon.

Silicon, copper, iridium, oxygen, cluster, complex, defect, diffusion, cooling rate, lifetime, recombination properties.

1) Fistul V.I. Dopant atoms in semiconductors. Moscow, Fizmatlit, 2004.

2) Silva D. J., Wahl U., Correia J. G., et al. Drawing the geometry of 3d transition metalboron pairs in silicon from electron emission channeling experiments. Nucl. Instrum. Instrum. Methods Phys. Res. B., 2016, vol. 371, pp. 59-62. DOI: 10.1016 / j.nimb.2015.09.051

3) Vyvenko O.F., Buonassisi T., Istratov A.A. X-ray beam induced current - a synchrotron radiation based technique for the in situ analysis of recombination properties and chemical nature of metal clusters in silicon. J. Appl. Phys., 2002, vol. 91, iss. 6, pp. 3614-3617. DOI: 10.1063 / 1.1450026

4) Riedel F., Schröter W. Electrical and structural properties of nanoscale NiSi2 precipitates in silicon. Phys. Rev. B, 2000, vol. 62, iss. 11, pp. 7150-7156. DOI: 10.1103 / PhysRevB.62.7150

5) Abdurakhmanov B.A., Bakhadirkhanov M.K., Ayupov K.S. Formation of clusters of impurity atoms of nickel in silicon and controlling their parameters. Nanosci. Nanotechnol., 2014, vol. 4, no. 2, pp. 23-26.

6) Schröter W., Hedemann H., Kveder V., et al. Measurements of energy spectra of extended defects. J. Phys .: Condens. Matter., 2002, vol. 14, no. 48, pp. 13047-13059. DOI: 10.1088 / 0953-8984 / 14/48/350

7) Lozovoy K.A. Kinetics of the formation of nanoheterostructures with germanium quantum dots on silicon for optoelectronic devices. Dis. ... Cand. physical-mat. sciences. Tomsk, TSU, 2016.

8) Istratov A.A., Weber E.R. Electrical properties and recombination activity of copper, nickel and cobalt in silicon. Appl. Phys. A, 1998, vol. 66, iss. 2, pp. 123-136. DOI: 10.1007 / s003390050649

9) Makhkamov Sh., Karimov M., Kurbanov A.O. and others. On the issue of thermal stability of the electrophysical properties p-Si and p-Si . Proceedings of universities. Physics, 2005, No. 12, p. 80–82.

10) Tanaka S., Ikari T., Kitagawa H. In-diffusion and annealing processes of substitutional nickel atoms in dislocation-free silicon. Jpn. J. Appl. Phys., 2001, vol. 40, part 1, no. 5A, pp. 3063-3068. DOI: 10.1143 / JJAP.40.3063

VOLUME 03 ISSUE 09 SEPTEMBER 2020